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G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB

G Skill Intl F3-14900CL9-4GBSR 4GB vs Crucial Technology BL16G36C16U4BL.M16FE 16GB

总分
star star star star star
G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

总分
star star star star star
Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

差异 规格 评论

差异

G Skill Intl F3-14900CL9-4GBSR 4GB 需要考虑的原因
G Skill Intl F3-14900CL9-4GBSR 4GB
报告一个错误
Crucial Technology BL16G36C16U4BL.M16FE 16GB 需要考虑的原因
Crucial Technology BL16G36C16U4BL.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 36
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.4 left arrow 10.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 24
  • 读取速度，GB/s
    16.4 left arrow 19.7
  • 写入速度，GB/s
    10.5 left arrow 18.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2618 left arrow 4182

G Skill Intl F3-14900CL9-4GBSR 4GB RAM的比较

G Skill Intl F4-2133C15-4GVR 4GB
Corsair CMU32GX4M4C3466C16 8GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Avant Technology J642GU42J2320NQ 16GB
Avant Technology J642GU42J2320NQ 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Corsair CM4B16G2L2666A18K2 16GB
Corsair CM4B16G2L2666A18K2 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
SK Hynix HMA82GS6CJR8N-UH 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KMKYF9-MIH 8GB
Kingston KMKYF9-MIH 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston KHX2133C13D4/8GX 8GB
Kingston KHX2133C13D4/8GX 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1K43DB2-CVF 8GB
Samsung M378A1K43DB2-CVF 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
内存RAM