G Skill Intl F3-14900CL9-4GBZL 4GB vs Heoriady M471A1K43BB1-CRC 16GB

总分

G Skill Intl F3-14900CL9-4GBZL 4GB

G Skill Intl F3-14900CL9-4GBZL 4GB

总分

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

差异规格评论

差异

G Skill Intl F3-14900CL9-4GBZL 4GB

需要考虑的原因
G Skill Intl F3-14900CL9-4GBZL 4GB

报告一个错误

更快的写入速度，GB/s

10.5 9.6

测试中的平均数值

Heoriady M471A1K43BB1-CRC 16GB

需要考虑的原因
Heoriady M471A1K43BB1-CRC 16GB

报告一个错误

更快的读取速度，GB/s

15.1 14.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL9-4GBZL 4GB

Heoriady M471A1K43BB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 37
读取速度，GB/s

14.5 15.1
写入速度，GB/s

10.5 9.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2675 2758

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung V-GeN D4S16GL32A8TS 16GB

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Micron Technology AFLD416EH1P 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology CT4G4DFS8266.C8FG 4GB

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Kingston KHX1600C9S3L/4G 4GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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Samsung M471B5173DB0-YK0 4GB

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Crucial Technology CT4G4DFS8266.C8FE 4GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

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Kingston 9965745-002.A00G 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB