G Skill Intl F3-1600C11-8GIS 8GB vs G Skill Intl F3-1600C11-4GIS 4GB

总分

G Skill Intl F3-1600C11-8GIS 8GB

G Skill Intl F3-1600C11-8GIS 8GB

总分

G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

差异规格评论

差异

G Skill Intl F3-1600C11-8GIS 8GB

需要考虑的原因
G Skill Intl F3-1600C11-8GIS 8GB

报告一个错误

更快的写入速度，GB/s

9.3 9.0

测试中的平均数值

G Skill Intl F3-1600C11-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1600C11-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 40

左右 -14% 更低的延时
更快的读取速度，GB/s

15.5 14.5

测试中的平均数值

规格

完整的技术规格清单

G Skill Intl F3-1600C11-8GIS 8GB

G Skill Intl F3-1600C11-4GIS 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 35
读取速度，GB/s

14.5 15.5
写入速度，GB/s

9.3 9.0
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2513 2405

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMK16GX4M2L3200C16 8GB

Corsair CMK16GX4M2L3200C16 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Kingston ACR26D4U9D8ME-16 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT4G4DFS824A.C8FF 4GB

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