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G Skill Intl F3-17000CL9-4GBXLD 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

总分
star star star star star
G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

总分
star star star star star
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

差异 规格 评论

差异

G Skill Intl F3-17000CL9-4GBXLD 4GB 需要考虑的原因
G Skill Intl F3-17000CL9-4GBXLD 4GB
报告一个错误
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB 需要考虑的原因
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    14 left arrow 21
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    26.4 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.8 left arrow 11.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-17000CL9-4GBXLD 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 14
  • 读取速度，GB/s
    16.0 left arrow 26.4
  • 写入速度，GB/s
    11.1 left arrow 19.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2581 left arrow 4362

G Skill Intl F3-17000CL9-4GBXLD 4GB RAM的比较

G Skill Intl F3-17000CL11-4GBXL 4GB
Kingston KHX16LC9/8GX 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
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内存RAM
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SK Hynix HMT325S6CFR8C-PB 2GB
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Corsair CMWB8G1L2666A16W4 8GB
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Corsair CML16GX3M2A1600C10 8GB
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G Skill Intl F3-14900CL9-4GBSR 4GB
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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Kingston LV26D4S9S8HJ-8 8GB
内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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Shenzhen Technology Co Ltd 8GB
内存RAM
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Micron Technology 8ATF1G64AZ-2G6B1 8GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
内存RAM