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G Skill Intl F3-17000CL9-4GBXLD 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
比较
G Skill Intl F3-17000CL9-4GBXLD 4GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB
总分
G Skill Intl F3-17000CL9-4GBXLD 4GB
总分
Memphis Electronic D4SO1G724GI-A58SD 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-17000CL9-4GBXLD 4GB
报告一个错误
低于PassMark测试中的延时,ns
21
30
左右 30% 更低的延时
更快的读取速度,GB/s
16
11.7
测试中的平均数值
更快的写入速度,GB/s
11.1
6.6
测试中的平均数值
需要考虑的原因
Memphis Electronic D4SO1G724GI-A58SD 8GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-17000CL9-4GBXLD 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
21
30
读取速度,GB/s
16.0
11.7
写入速度,GB/s
11.1
6.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2581
1832
G Skill Intl F3-17000CL9-4GBXLD 4GB RAM的比较
G Skill Intl F3-17000CL11-4GBXL 4GB
Kingston KHX16LC9/8GX 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905403-090.A01LF 4GB
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G Skill Intl F3-17000CL9-4GBXLD 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
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V-GEN D4H4GL26A8TS5 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
报告一个错误
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