G Skill Intl F3-1866C8-8GTX 8GB vs Micron Technology 8ATF51264AZ-2G1AY 4GB

总分

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

总分

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

差异规格评论

差异

G Skill Intl F3-1866C8-8GTX 8GB

需要考虑的原因
G Skill Intl F3-1866C8-8GTX 8GB

报告一个错误

更快的读取速度，GB/s

16.8 13.8

测试中的平均数值
更快的写入速度，GB/s

10.8 8.7

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1AY 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1AY 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 -11% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1866C8-8GTX 8GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 28
读取速度，GB/s

16.8 13.8
写入速度，GB/s

10.8 8.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2904 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT25664BA160B.C16F 2GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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Kingston KHYXPX-MID 8GB

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SK Hynix HMA82GS6AFR8N-UH 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M378A1K43EB2-CWE 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CT4G4DFS8213.C8FAD1 4GB

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Corsair CMK16GX4M2B3200C16 8GB

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Kingston KF2666C16D4/8G 8GB

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Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

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