G Skill Intl F3-2133C11-8GAR 8GB vs SK Hynix HMA42GR7AFR4N-TF 16GB

总分

G Skill Intl F3-2133C11-8GAR 8GB

G Skill Intl F3-2133C11-8GAR 8GB

总分

SK Hynix HMA42GR7AFR4N-TF 16GB

SK Hynix HMA42GR7AFR4N-TF 16GB

差异规格评论

差异

G Skill Intl F3-2133C11-8GAR 8GB

需要考虑的原因
G Skill Intl F3-2133C11-8GAR 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 50

左右 32% 更低的延时
更快的读取速度，GB/s

14.4 10.6

测试中的平均数值
更快的写入速度，GB/s

9.9 8.2

测试中的平均数值

SK Hynix HMA42GR7AFR4N-TF 16GB

需要考虑的原因
SK Hynix HMA42GR7AFR4N-TF 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2133C11-8GAR 8GB

SK Hynix HMA42GR7AFR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 50
读取速度，GB/s

14.4 10.6
写入速度，GB/s

9.9 8.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2615 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-16GTZ 16GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-4400C18-8GTRS 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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HT Micron HTH5AN8G8NCJR-VKD 8GB

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Samsung M393B1K70CH0-CH9 8GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Gloway International Co. Ltd. WAR4U2666D19081C 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Samsung M471A2K43CB1-CTCT 16GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Mushkin MR[ABC]4U320GJJM32G 32GB

Mushkin MR[ABC]4U320GJJM32G 32GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F4-2800C15-8GVSB 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB