RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F3-2133C9-4GAB 4GB vs G Skill Intl F4-2666C19-8GRS 8GB

总分
star star star star star
G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分
star star star star star
G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

差异 规格 评论

差异

G Skill Intl F3-2133C9-4GAB 4GB 需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 16.3
    测试中的平均数值
G Skill Intl F4-2666C19-8GRS 8GB 需要考虑的原因
G Skill Intl F4-2666C19-8GRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 36
    左右 -3% 更低的延时
  • 更快的写入速度，GB/s
    12.6 left arrow 11.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2666C19-8GRS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 35
  • 读取速度，GB/s
    16.4 left arrow 16.3
  • 写入速度，GB/s
    11.0 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2729 left arrow 2863

G Skill Intl F3-2133C9-4GAB 4GB RAM的比较

Corsair CMZ8GX3M2A2133C11 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

G Skill Intl F4-2666C19-8GRS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2666C19-8GRS 8GB
G Skill Intl F4-2666C19-8GRS 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-4000C17-8GTRS 8GB
G Skill Intl F4-4000C17-8GTRS 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
EVGA 8GX-D4-2800-MR 8GB
EVGA 8GX-D4-2800-MR 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CMK64GX4M4A2133C13 16GB
Corsair CMK64GX4M4A2133C13 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMW32GX4M4Z4000C18 8GB
Corsair CMW32GX4M4Z4000C18 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
EVGA 8GX-D4-3200-MR 8GB
EVGA 8GX-D4-3200-MR 8GB
内存RAM