G Skill Intl F3-2133C9-4GAB 4GB vs G Skill Intl F4-3200C16-16GSXFB 16GB

总分

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分

G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

差异规格评论

差异

G Skill Intl F3-2133C9-4GAB 4GB

需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB

报告一个错误

G Skill Intl F4-3200C16-16GSXFB 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GSXFB 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 36

左右 -64% 更低的延时
更快的读取速度，GB/s

18.5 16.4

测试中的平均数值
更快的写入速度，GB/s

14.2 11.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-3200C16-16GSXFB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 22
读取速度，GB/s

16.4 18.5
写入速度，GB/s

11.0 14.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2729 3392

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Kingston KVR533D2N4 512MB

Kingston ACR26D4S9D8MD-16 16GB

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Samsung M378B5673EH1-CF8 2GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

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Kingston HX424C15FB/8 8GB

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AMD AE34G1601U1 4GB

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