G Skill Intl F3-2400C10-8GTX 8GB vs Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

总分

G Skill Intl F3-2400C10-8GTX 8GB

G Skill Intl F3-2400C10-8GTX 8GB

总分

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

差异规格评论

差异

G Skill Intl F3-2400C10-8GTX 8GB

需要考虑的原因
G Skill Intl F3-2400C10-8GTX 8GB

报告一个错误

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 -21% 更低的延时
更快的读取速度，GB/s

18.2 16.4

测试中的平均数值
更快的写入速度，GB/s

15.9 11.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C10-8GTX 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 29
读取速度，GB/s

16.4 18.2
写入速度，GB/s

11.4 15.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2960 3866

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2400C10-8GTX 8GB

G Skill Intl F3-2400C10-8GTX 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-4000C16-16GVKA 16GB

G Skill Intl F4-4000C16-16GVKA 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99P5471-016.A00LF 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

AMD R744G2400U1S-UO 4GB

AMD R744G2400U1S-UO 4GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Kingston KCRXJ6-HYJ 16GB

Kingston KCRXJ6-HYJ 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS8G4D240FSB.16FARG 8GB

Crucial Technology BLS8G4D240FSB.16FARG 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB