G Skill Intl F3-2400C11-8GSR 8GB vs Crucial Technology BLS4G4D240FSB.M8FBD 4GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSB.M8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 34

左右 -55% 更低的延时
更快的读取速度，GB/s

17.6 16.8

测试中的平均数值
更快的写入速度，GB/s

12.9 11.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 22
读取速度，GB/s

16.8 17.6
写入速度，GB/s

11.3 12.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2968 2728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston XRMWRN-MIE 16GB

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OCZ OCZ2V8002G 2GB

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Corsair CMX4GX3M1A1333C9 4GB

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Apacer Technology 78.C1GMM.DFW0C 8GB

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Kingston KHYXPX-MIE 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston KHX2666C15S4/8G 8GB

Kingston KHX2666C15S4/8G 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Essencore Limited KD48GU880-36A180X 8GB

Essencore Limited KD48GU880-36A180X 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMK8GX4M2A2133C13 4GB

Corsair CMK8GX4M2A2133C13 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT8G4SFS824A.M8FD 8GB

Crucial Technology CT8G4SFS824A.M8FD 8GB