G Skill Intl F3-2400C11-8GSR 8GB vs Crucial Technology CT16G4SFD824A.C16FBD 16GB

总分

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

总分

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

差异规格评论

差异

G Skill Intl F3-2400C11-8GSR 8GB

需要考虑的原因
G Skill Intl F3-2400C11-8GSR 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 11% 更低的延时
更快的读取速度，GB/s

16.8 14.5

测试中的平均数值
更快的写入速度，GB/s

11.3 10.0

测试中的平均数值

Crucial Technology CT16G4SFD824A.C16FBD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FBD 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2400C11-8GSR 8GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 38
读取速度，GB/s

16.8 14.5
写入速度，GB/s

11.3 10.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2968 2509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Essencore Limited KD4AGU88C-26N1900 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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G Skill Intl F4-2666C15-8GRKB 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Patriot Memory (PDP Systems) 4133 C19 Series 8GB

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G Skill Intl F4-3300C16-8GTZKW 8GB

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Samsung M393B2G70BH0-YK0 16GB

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Panram International Corporation D4N2666PS-16G 16GB

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Samsung M378T5663QZ3-CF7 2GB

Kingston KHX3200C16D4/8GX 8GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Micron Technology 16ATF1G64HZ-2G1B1 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

Crucial Technology CT16G4SFD8266.M16FE 16GB