G Skill Intl F3-2666C12-8GTXD 8GB vs Apacer Technology 78.D1GS7.B7B0B 16GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Apacer Technology 78.D1GS7.B7B0B 16GB

Apacer Technology 78.D1GS7.B7B0B 16GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

更快的读取速度，GB/s

18.2 17.6

测试中的平均数值

Apacer Technology 78.D1GS7.B7B0B 16GB

需要考虑的原因
Apacer Technology 78.D1GS7.B7B0B 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 -4% 更低的延时
更快的写入速度，GB/s

14.4 11.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Apacer Technology 78.D1GS7.B7B0B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 27
读取速度，GB/s

18.2 17.6
写入速度，GB/s

11.5 14.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3067 3474

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3000C14-16GVR 16GB

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Apacer Technology 78.D1GS7.B7B0B 16GB

Apacer Technology 78.D1GS7.B7B0B 16GB

SK Hynix HYMP112U64CP8-S5 1GB

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V-GEN D4S8GL32A8TS 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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DSL Memory D4SS1G081SH24A-A 8GB

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G Skill Intl F4-2400C16-8GRS 8GB

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A-DATA Technology VDQVE1B16 2GB

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Kingston KF3600C17D4/8GX 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB

Crucial Technology BLS8G4D240FSA.16FBD 8GB