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G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB vs Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

总分
star star star star star
G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

差异 规格 评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB 需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 11.4
    测试中的平均数值
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    18.2 left arrow 15.0
  • 写入速度，GB/s
    11.5 left arrow 11.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3067 left arrow 2628

G Skill Intl F3-2666C12-8GTXD 8GB RAM的比较

G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-4000C18-32GTZN 32GB
G Skill Intl F4-4000C18-32GTZN 32GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C16-8GTRG 8GB
G Skill Intl F4-3000C16-8GTRG 8GB
内存RAM
Kingston KHX2933C17D4/8G 8GB
Kingston KHX2933C17D4/8G 8GB
Kingston HX424C15FB/16 16GB
Kingston HX424C15FB/16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMA81GU6MFR8N-UH 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3200C22-32GRS 32GB
G Skill Intl F4-3200C22-32GRS 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology AFLD44EK2P 4GB
Micron Technology AFLD44EK2P 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston ACR26D4U9S8ME-8X 8GB
Kingston ACR26D4U9S8ME-8X 8GB
内存RAM
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMA82GS6CJR8N-XN 16GB
SK Hynix HMA82GS6CJR8N-XN 16GB
内存RAM