G Skill Intl F3-2666C12-8GTXD 8GB vs Micron Technology 16ATF4G64HZ-2G6B4 32GB

总分

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

总分

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

差异规格评论

差异

G Skill Intl F3-2666C12-8GTXD 8GB

需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 26% 更低的延时
更快的读取速度，GB/s

18.2 15.9

测试中的平均数值

Micron Technology 16ATF4G64HZ-2G6B4 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B4 32GB

报告一个错误

更快的写入速度，GB/s

15.1 11.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2666C12-8GTXD 8GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 38
读取速度，GB/s

18.2 15.9
写入速度，GB/s

11.5 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3067 3264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW64GX4M4E3200C16 16GB

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Samsung M4 70T2864QZ3-CF7 1GB

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SK Hynix HMA81GR7AFR8N-UH 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Micron Technology 16ATF1G64AZ-2G3A2 8GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB