G Skill Intl F3-2800C12-8GTXDG 8GB vs ADVAN Inc AM42E28UD04T-NVL 4GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 23

左右 9% 更低的延时

ADVAN Inc AM42E28UD04T-NVL 4GB

需要考虑的原因
ADVAN Inc AM42E28UD04T-NVL 4GB

报告一个错误

更快的读取速度，GB/s

18.2 17.4

测试中的平均数值
更快的写入速度，GB/s

14.4 12.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

ADVAN Inc AM42E28UD04T-NVL 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 23
读取速度，GB/s

17.4 18.2
写入速度，GB/s

12.2 14.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3130 2830

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.C1GMW.AUC0B 8GB

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Kingston 9965525-018.A00LF 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB