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G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Crucial Technology BL8G30C15U4B.M8FE1 8GB

总分
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分
star star star star star
Crucial Technology BL8G30C15U4B.M8FE1 8GB

Crucial Technology BL8G30C15U4B.M8FE1 8GB

差异 规格 评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB 需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 28
    左右 25% 更低的延时
Crucial Technology BL8G30C15U4B.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4B.M8FE1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.9 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 12.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 28
  • 读取速度，GB/s
    17.4 left arrow 17.9
  • 写入速度，GB/s
    12.2 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3130 left arrow 3453

G Skill Intl F3-2800C12-8GTXDG 8GB RAM的比较

Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB

Crucial Technology BL8G30C15U4B.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX3600C18D4/16GX 16GB
Kingston KHX3600C18D4/16GX 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Micron Technology TEAMGROUP-UD4-2133 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Kingston XW21KG-HYD-NX 8GB
Kingston XW21KG-HYD-NX 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK16GX4M2Z3200C16 8GB
Corsair CMK16GX4M2Z3200C16 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
内存RAM