G Skill Intl F3-2800C12-8GTXDG 8GB vs G Skill Intl F4-3300C16-8GTZSW 8GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

G Skill Intl F4-3300C16-8GTZSW 8GB

G Skill Intl F4-3300C16-8GTZSW 8GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

G Skill Intl F4-3300C16-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3300C16-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 21

左右 -5% 更低的延时
更快的读取速度，GB/s

20.3 17.4

测试中的平均数值
更快的写入速度，GB/s

15.5 12.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F4-3300C16-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 20
读取速度，GB/s

17.4 20.3
写入速度，GB/s

12.2 15.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3130 3632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-Y5 1GB

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Corsair CM4X16GC3000C15D4 16GB

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Corsair CM3X2G1600C9 2GB

Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4SFS824A.C8FAD1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3000C15-4GTZ 4GB

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Crucial Technology CT8G4DFS832A.C8FJ 8GB

Crucial Technology CT8G4DFS832A.C8FJ 8GB