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G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-8GTZR 8GB vs G Skill Intl F4-3200C16-16GTZR 16GB

总分
star star star star star
G Skill Intl F4-3200C16-8GTZR 8GB

G Skill Intl F4-3200C16-8GTZR 8GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

差异 规格 评论

差异

G Skill Intl F4-3200C16-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
G Skill Intl F4-3200C16-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.4 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 14.6
    测试中的平均数值

规格

完整的技术规格清单
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-16GTZR 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    18.2 left arrow 18.4
  • 写入速度，GB/s
    14.6 left arrow 14.8
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3546 left arrow 3657

G Skill Intl F4-3200C16-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3200C16-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
内存RAM
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-16GTZR 16GB
G Skill Intl F4-3200C16-16GTZR 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston ACR26D4U9D8ME-16 16GB
Kingston ACR26D4U9D8ME-16 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-2133C15-4GRK 4GB
G Skill Intl F4-2133C15-4GRK 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3300C16-4GRKD 4GB
G Skill Intl F4-3300C16-4GRKD 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology M471A1K43CB1-CTD 8GB
Micron Technology M471A1K43CB1-CTD 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM