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G Skill Intl F5-6000J3636F16G 16GB
Samsung M474A1G43EB1-CRC 8GB

G Skill Intl F5-6000J3636F16G 16GB vs Samsung M474A1G43EB1-CRC 8GB

总分
star star star star star
G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

总分
star star star star star
Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

差异 规格 评论

差异

G Skill Intl F5-6000J3636F16G 16GB 需要考虑的原因
G Skill Intl F5-6000J3636F16G 16GB
报告一个错误
Samsung M474A1G43EB1-CRC 8GB 需要考虑的原因
Samsung M474A1G43EB1-CRC 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.2 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 13.4
    测试中的平均数值

规格

完整的技术规格清单
G Skill Intl F5-6000J3636F16G 16GB
Samsung M474A1G43EB1-CRC 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 22
  • 读取速度，GB/s
    14.4 left arrow 17.2
  • 写入速度，GB/s
    13.4 left arrow 13.8
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3671 left arrow 2989

G Skill Intl F5-6000J3636F16G 16GB RAM的比较

Apacer Technology 76.D105G.D090B 16GB
Kingston 9905783-025.A01G 16GB

Samsung M474A1G43EB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
V-GEN D4H4GL26A8TS5 4GB
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内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Apacer Technology GD2.0927WH.001 8GB
Apacer Technology GD2.0927WH.001 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
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Crucial Technology BLS8G4S240FSDK.8FD 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Crucial Technology CT16G4DFD824A.M16FA 16GB
内存RAM
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Kingston 9905665-017.A00G 4GB
Kingston 9905665-017.A00G 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
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Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
内存RAM
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Kingston 9905403-02X.A00LF 8GB
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G Skill Intl F4-2666C18-16GRS 16GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
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内存RAM
Crucial Technology CT16G4SFD832A.C16FN 16GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
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Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
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takeMS International AG TMS2GB264D082-805G 2GB
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Crucial Technology CT16G4SFD824A.M16FA 16GB
内存RAM
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM