RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Golden Empire 1GB DDR2 800 CAS=4 1GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
比较
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
总分
Golden Empire 1GB DDR2 800 CAS=4 1GB
总分
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
差异
规格
评论
差异
需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
更快的读取速度,GB/s
4
17.3
测试中的平均数值
更快的写入速度,GB/s
2,066.5
14.5
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
报告一个错误
低于PassMark测试中的延时,ns
34
49
左右 -44% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
49
34
读取速度,GB/s
4,577.1
17.3
写入速度,GB/s
2,066.5
14.5
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
737
3606
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-2666C18-8GFX 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD16GX4M2B3200C14 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-4266C19-8GTZR 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CM4X8GF2400C16N2 8GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. W-MEM2666S416G 16GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C15-16GTZKW 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Kingston 9905402-665.A00LF 4GB
G Skill Intl F4-4800C18-8GTRS 8GB
Peak Electronics 256X64M-67E 2GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
报告一个错误
×
Bug description
Source link