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Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMD16GX4M2E4000C19 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Corsair CMD16GX4M2E4000C19 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 14.9
    测试中的平均数值
Corsair CMD16GX4M2E4000C19 8GB 需要考虑的原因
Corsair CMD16GX4M2E4000C19 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 49
    左右 -88% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMD16GX4M2E4000C19 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 26
  • 读取速度，GB/s
    4,577.1 left arrow 18.5
  • 写入速度，GB/s
    2,066.5 left arrow 14.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 3475

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Corsair CMD16GX4M2E4000C19 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMD16GX4M2E4000C19 8GB
Corsair CMD16GX4M2E4000C19 8GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905624-019.A00G 8GB
Kingston 9905624-019.A00G 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
内存RAM
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4400C17-16GVK 16GB
G Skill Intl F4-4400C17-16GVK 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM