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Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2400C15-16GIS 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-2400C15-16GIS 16GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
G Skill Intl F4-2400C15-16GIS 16GB

G Skill Intl F4-2400C15-16GIS 16GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 11.6
    测试中的平均数值
G Skill Intl F4-2400C15-16GIS 16GB 需要考虑的原因
G Skill Intl F4-2400C15-16GIS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 49
    左右 -58% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2400C15-16GIS 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 31
  • 读取速度，GB/s
    4,577.1 left arrow 16.7
  • 写入速度，GB/s
    2,066.5 left arrow 11.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 3133

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

G Skill Intl F4-2400C15-16GIS 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-4000C19-4GTZ 4GB
G Skill Intl F4-4000C19-4GTZ 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3200C15-8GVK 8GB
G Skill Intl F4-3200C15-8GVK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KF2933C17S4/32G 32GB
Kingston KF2933C17S4/32G 32GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix GKE800SO51208-2133AH 8GB
SK Hynix GKE800SO51208-2133AH 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Corsair CMSX8GX4M1A2666C18 8GB
Corsair CMSX8GX4M1A2666C18 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5700-014.A00G 8GB
Kingston 99U5700-014.A00G 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT16G4SFD8266 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM