Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-3333C16-16GTZSK 16GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

G Skill Intl F4-3333C16-16GTZSK 16GB

G Skill Intl F4-3333C16-16GTZSK 16GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 13.6

测试中的平均数值

G Skill Intl F4-3333C16-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZSK 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 49

左右 -75% 更低的延时
更快的写入速度，GB/s

9.2 2,066.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3333C16-16GTZSK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 28
读取速度，GB/s

4,577.1 13.6
写入速度，GB/s

2,066.5 9.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

737 2625

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology ADOVE1A0834E 1GB

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Smart Modular SF464128CK8I6GKSEG 4GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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G Skill Intl F4-3466C16-16GTZR 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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G Skill Intl F4-2400C16-8GFT 8GB

G Skill Intl F4-2400C16-8GFT 8GB

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G Skill Intl F4-3000C14-16GTZR 16GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

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G Skill Intl F4-4800C20-16GTZR 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

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G Skill Intl F4-3200C14-8GVK 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB