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Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4600C19-8GTZSWC 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-4600C19-8GTZSWC 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 22.3
    测试中的平均数值
G Skill Intl F4-4600C19-8GTZSWC 8GB 需要考虑的原因
G Skill Intl F4-4600C19-8GTZSWC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    16 left arrow 49
    左右 -206% 更低的延时
  • 更快的写入速度，GB/s
    21.2 left arrow 2,066.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 16
  • 读取速度，GB/s
    4,577.1 left arrow 22.3
  • 写入速度，GB/s
    2,066.5 left arrow 21.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 3952

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

G Skill Intl F4-4600C19-8GTZSWC 8GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
Panram International Corporation PUD42400C154G4NJK 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW16GX4M2Z4600C18 8GB
Corsair CMW16GX4M2Z4600C18 8GB
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A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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Mushkin 99[2/7/4]208F 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Kllisre M471A1K43CB1-CTD 8GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Corsair CMR128GX4M8Z2933C16 16GB
Corsair CMR128GX4M8Z2933C16 16GB
内存RAM
Samsung M378B1G73QH0-YK0 8GB
Samsung M378B1G73QH0-YK0 8GB
Samsung M393A2K40CB1-CRC 16GB
Samsung M393A2K40CB1-CRC 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology AFSD416ES1P 16GB
Micron Technology AFSD416ES1P 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Essencore Limited KD48GU880-32N220T 8GB
Essencore Limited KD48GU880-32N220T 8GB
内存RAM
Kingston 9905678-024.A00G 4GB
Kingston 9905678-024.A00G 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM