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Golden Empire 1GB DDR2 800 CAS=4 1GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 50
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 13.4
    测试中的平均数值
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB 需要考虑的原因
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
报告一个错误
  • 更快的写入速度，GB/s
    7.3 left arrow 2,066.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 50
  • 读取速度，GB/s
    4,577.1 left arrow 13.4
  • 写入速度，GB/s
    2,066.5 left arrow 7.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    737 left arrow 1976

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
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Corsair CMX4GX3M2A1600C9 2GB
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Crucial Technology CT8G4DFD824A.M16FF 8GB
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AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
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G Skill Intl F3-10600CL9-2GBNT 2GB
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Asgard VMA45UG-MIC1U22T2 8GB
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Samsung M393B1G70BH0-YK0 8GB
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Kingston X74R9W-MIE 8GB
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
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Apacer Technology 78.01G86.9H50C 1GB
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Corsair CMW16GX4M2Z4600C18 8GB
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Corsair CMK8GX4M2A2400C16 4GB
内存RAM
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SK Hynix HMT325S6BFR8C-H9 2GB
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Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
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Samsung M471B5273DH0-CH9 4GB
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Crucial Technology CT16G4SFS8266.C8FB 16GB
内存RAM
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A-DATA Technology AD73I1B1672EG 2GB
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Golden Empire CL16-16-16 D4-3000 4GB
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AMD AE34G1601U1 4GB
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Kingston KHX2666C15S4/8G 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
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SK Hynix HMA82GU6CJR8N-VK 16GB
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