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Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.7
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 49
    左右 -69% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 2,066.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 29
  • 读取速度，GB/s
    4,577.1 left arrow 13.7
  • 写入速度，GB/s
    2,066.5 left arrow 9.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2407

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB RAM的比较

Kingston 9905403-090.A01LF 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX3333C16D4/16GX 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston MSI24D4S7S8MB-8 8GB
Kingston MSI24D4S7S8MB-8 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
G Skill Intl F4-3200C16-8GIS 8GB
G Skill Intl F4-3200C16-8GIS 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung 18ASF1G72PDZ-2G1B1 16GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Essencore Limited IM44GU48N26-FFFHM 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M4E4000C19 8GB
Corsair CMD32GX4M4E4000C19 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Mushkin 994104 8GB
Mushkin 994104 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CM4X16GF3200C22S2 16GB
Corsair CM4X16GF3200C22S2 16GB
内存RAM
Kingston SNY1333D3S9ELC/4G 4GB
Kingston SNY1333D3S9ELC/4G 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
内存RAM