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Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
比较
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
总分
Golden Empire 1GB DDR2 800 CAS=4 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
更快的读取速度,GB/s
4
10
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
49
左右 -63% 更低的延时
更快的写入速度,GB/s
8.5
2,066.5
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
49
30
读取速度,GB/s
4,577.1
10.0
写入速度,GB/s
2,066.5
8.5
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
737
2234
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB RAM的比较
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905402-665.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KMKYF9-MIH 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston CAC24D4S7D8MB-16 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Samsung M378A2K43EB1-CWE 16GB
G Skill Intl F4-3200C14-16GVK 16GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-2400C17-4GFX 4GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3866C18-8GTZSW 8GB
Samsung M378T5663QZ3-CF7 2GB
Nanya Technology M2Y1G64TU88D4B-AC 1GB
G Skill Intl F3-1600C11-8GIS 8GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX2666C16S4/16G 16GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston CBD26D4U9S8ME-8 8GB
报告一个错误
×
Bug description
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