Golden Empire 1GB DDR2 800 CAS=4 1GB vs PUSKILL PJ8TFK1GM8 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 13.1

测试中的平均数值
更快的写入速度，GB/s

2,066.5 12.9

测试中的平均数值

PUSKILL PJ8TFK1GM8 8GB

需要考虑的原因
PUSKILL PJ8TFK1GM8 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 49

左右 -44% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

PUSKILL PJ8TFK1GM8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 34
读取速度，GB/s

4,577.1 13.1
写入速度，GB/s

2,066.5 12.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

737 2608

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS8213.C8FDR1 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Wilk Elektronik S.A. W-HK26S16G 16GB

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SK Hynix HMAA4GS6AJR8N-VK 32GB

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Samsung M386B4G70DM0-CMA4 32GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

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Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

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SK Hynix MMA82GS6CJR8N-VK 16GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB