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Hexon Technology Pte Ltd HEXON 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Hexon Technology Pte Ltd HEXON 1GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.6
    测试中的平均数值
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 62
    左右 -138% 更低的延时
  • 更快的写入速度，GB/s
    11.6 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 26
  • 读取速度，GB/s
    3,556.6 left arrow 15.6
  • 写入速度，GB/s
    1,843.6 left arrow 11.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2808

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
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内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Apacer Technology 78.D2GFH.4030B 16GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
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Micron Technology 18ASF1G72PDZ-2G3A2 8GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
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A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C14-8GFX 8GB
G Skill Intl F4-3200C14-8GFX 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
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Samsung M391A1K43BB1-CRC 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
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G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Samsung M393A5143DB0-CPB 4GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
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Kingston KH2400C15D4/8 8GB
内存RAM