Hexon Technology Pte Ltd HEXON 1GB vs Corsair CM4B8G2J3000K15K 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Corsair CM4B8G2J3000K15K 8GB

Corsair CM4B8G2J3000K15K 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 17.2

测试中的平均数值

Corsair CM4B8G2J3000K15K 8GB

需要考虑的原因
Corsair CM4B8G2J3000K15K 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 62

左右 -182% 更低的延时
更快的写入速度，GB/s

13.3 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Corsair CM4B8G2J3000K15K 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 22
读取速度，GB/s

3,556.6 17.2
写入速度，GB/s

1,843.6 13.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 3142

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston KHX2133C11D3/4GX 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

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Kingston HP26D4S9S8MH-8 8GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

Crucial Technology CT32G4SFD8266.C16FB 32GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

SK Hynix HMA41GU6MFR8N-TF 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

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Kingston KHX3600C18D4/16GX 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

SK Hynix HMA82GS6MFR8N-TF 16GB

SK Hynix HMA82GS6MFR8N-TF 16GB