Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology BL8G36C16U4B.M8FE1 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology BL8G36C16U4B.M8FE1 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 20.1

测试中的平均数值

Crucial Technology BL8G36C16U4B.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G36C16U4B.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 62

左右 -130% 更低的延时
更快的写入速度，GB/s

16.7 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 27
读取速度，GB/s

3,556.6 20.1
写入速度，GB/s

1,843.6 16.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 3759

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-D8K3B 4GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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Corsair CMK32GX4M4K4133C19 8GB

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Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Kingston 9965525-155.A00LF 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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V-Color Technology Inc. TL48G24S815RGB 8GB

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Samsung M471B5173DB0-YK0 4GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB