Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology CT16G4SFD824A.M16FB 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 14.8

测试中的平均数值

Crucial Technology CT16G4SFD824A.M16FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 62

左右 -63% 更低的延时
更快的写入速度，GB/s

10.9 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 38
读取速度，GB/s

3,556.6 14.8
写入速度，GB/s

1,843.6 10.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 2536

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70QH0-YK0 8GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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Essencore Limited KD4AGU880-32A160X 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

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ASint Technology SSA302G08-EGN1C 4GB

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Samsung M471A4G43BB1-CWE 32GB

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A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB