Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology CT4G4DFS8213.C8FDD2 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FDD2 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 62

左右 -114% 更低的延时
更快的写入速度，GB/s

10.3 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 29
读取速度，GB/s

3,556.6 16.0
写入速度，GB/s

1,843.6 10.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-156.A00LF 2GB

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Samsung M393B1K70CH0-YH9 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

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Corsair CMZ16GX3M2A2400C10 8GB

Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB