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Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C14-16GTZDCB 16GB

Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-3200C14-16GTZDCB 16GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.5
    测试中的平均数值
G Skill Intl F4-3200C14-16GTZDCB 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZDCB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 62
    左右 -195% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 21
  • 读取速度，GB/s
    3,556.6 left arrow 19.5
  • 写入速度，GB/s
    1,843.6 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3512

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

G Skill Intl F4-3200C14-16GTZDCB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Corsair CMW32GX4M2D3600C18 16GB
Corsair CMW32GX4M2D3600C18 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston ACR26D4S9S8MH-8 8GB
Kingston ACR26D4S9S8MH-8 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-8GSX 8GB
G Skill Intl F4-3200C16-8GSX 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMD32GX4M4B3466C16 8GB
Corsair CMD32GX4M4B3466C16 8GB
内存RAM