Hexon Technology Pte Ltd HEXON 1GB vs Kingston KF3200C16D4/8GX 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 19.5

测试中的平均数值

Kingston KF3200C16D4/8GX 8GB

需要考虑的原因
Kingston KF3200C16D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 62

左右 -100% 更低的延时
更快的写入速度，GB/s

14.5 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Kingston KF3200C16D4/8GX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 31
读取速度，GB/s

3,556.6 19.5
写入速度，GB/s

1,843.6 14.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 3391

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C19-8GVK 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KF3200C16D4/16GX 16GB

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Kingston KF552C40-16 16GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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G Skill Intl F4-3600C19-8GSXF 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB