Hexon Technology Pte Ltd HEXON 1GB vs Patriot Memory (PDP Systems) 2400 C15 Series 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 2400 C15 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 62

左右 -94% 更低的延时
更快的写入速度，GB/s

11.3 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 32
读取速度，GB/s

3,556.6 15.7
写入速度，GB/s

1,843.6 11.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFD8213.C16FBR 16GB

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Corsair CMK64GX4M4D3600C18 16GB

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Samsung M471A2K43EB1-CTD 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

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Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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G Skill Intl F4-2400C15Z8GNT 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB