Hexon Technology Pte Ltd HEXON 1GB vs Patriot Memory (PDP Systems) 3000 C15 Series 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 18.2

测试中的平均数值

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3000 C15 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 62

左右 -121% 更低的延时
更快的写入速度，GB/s

14.2 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 28
读取速度，GB/s

3,556.6 18.2
写入速度，GB/s

1,843.6 14.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 3501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KVR533D2N4 512MB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

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Kingston 99U5474-023.A00LF 4GB

Corsair CM4X8GE2400C14K4 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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