Hexon Technology Pte Ltd HEXON 1GB vs Samsung M378A1K43BB1-CRC 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Samsung M378A1K43BB1-CRC 8GB

需要考虑的原因
Samsung M378A1K43BB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 62

左右 -182% 更低的延时
更快的写入速度，GB/s

9.5 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A1K43BB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 22
读取速度，GB/s

3,556.6 15.9
写入速度，GB/s

1,843.6 9.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 2611

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMT64GX4M4Z3600C18 16GB

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Kingston K531R8-MIN 4GB

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Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Corsair CM4X8GE2666C16K4 8GB

Corsair CM4X8GE2666C16K4 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB