Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs A-DATA Technology AO2P21FC8R2-BRGS 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

A-DATA Technology AO2P21FC8R2-BRGS 8GB

需要考虑的原因
A-DATA Technology AO2P21FC8R2-BRGS 8GB

报告一个错误

更快的读取速度，GB/s

18.7 16.7

测试中的平均数值
更快的写入速度，GB/s

13.5 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

16.7 18.7
写入速度，GB/s

11.8 13.5
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2756 3495

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3000C14-8GTZ 8GB

G Skill Intl F4-3000C14-8GTZ 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMR128GX4M8X3800C19 16GB

Corsair CMR128GX4M8X3800C19 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology AFLD48VH1P 8GB

Micron Technology AFLD48VH1P 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB