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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD32GX4M4B3866C18 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Corsair CMD32GX4M4B3866C18 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Corsair CMD32GX4M4B3866C18 8GB

Corsair CMD32GX4M4B3866C18 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
Corsair CMD32GX4M4B3866C18 8GB 需要考虑的原因
Corsair CMD32GX4M4B3866C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 27
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    21.1 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.9 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD32GX4M4B3866C18 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 18
  • 读取速度，GB/s
    16.7 left arrow 21.1
  • 写入速度，GB/s
    11.8 left arrow 16.9
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 3971

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Corsair CMD32GX4M4B3866C18 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Kingston 9905403-447.A00LF 4GB
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Crucial Technology CT51264BA1339.D16F 4GB
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内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
Kingston 99P5471-016.A00LF 8GB
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内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
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Patriot Memory (PDP Systems) PSD416G266681 16GB
内存RAM
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Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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内存RAM
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A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3200C16-16GSXWB 16GB
G Skill Intl F4-3200C16-16GSXWB 16GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
G Skill Intl F4-3600C16-16GTRG 16GB
G Skill Intl F4-3600C16-16GTRG 16GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Teikon TMA451S6AFR8N-TFSC 4GB
Teikon TMA451S6AFR8N-TFSC 4GB
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