Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-3000C16-8GVRB 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

G Skill Intl F4-3000C16-8GVRB 8GB

需要考虑的原因
G Skill Intl F4-3000C16-8GVRB 8GB

报告一个错误

更快的读取速度，GB/s

17 16.7

测试中的平均数值
更快的写入速度，GB/s

13.2 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C16-8GVRB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

16.7 17.0
写入速度，GB/s

11.8 13.2
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2756 3117

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

King Tiger Technology TMKG8G3000C17(XMP) 8GB

King Tiger Technology TMKG8G3000C17(XMP) 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMR64GX4M8C3000C15 8GB

Corsair CMR64GX4M8C3000C15 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9965604-033.D00G 16GB

Kingston 9965604-033.D00G 16GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Transcend Information TS2GLH64V4B 16GB

Transcend Information TS2GLH64V4B 16GB

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB