Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-3200C16-8GVGB 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

G Skill Intl F4-3200C16-8GVGB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVGB 8GB

报告一个错误

更快的读取速度，GB/s

18.9 16.7

测试中的平均数值
更快的写入速度，GB/s

14.6 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C16-8GVGB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

16.7 18.9
写入速度，GB/s

11.8 14.6
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2756 3504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905403-447.A00LF 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

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G Skill Intl F4-3200C16-4GTZ 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB