Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung M393A2G40EB2-CTD 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 44

左右 39% 更低的延时
更快的读取速度，GB/s

16.7 8.5

测试中的平均数值
更快的写入速度，GB/s

11.8 5.6

测试中的平均数值

Samsung M393A2G40EB2-CTD 16GB

需要考虑的原因
Samsung M393A2G40EB2-CTD 16GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A2G40EB2-CTD 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 44
读取速度，GB/s

16.7 8.5
写入速度，GB/s

11.8 5.6
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 1660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4266C17-8GTZRB 8GB

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Micron Technology 8ATF51264AZ-2G1B1 4GB

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PNY Electronics PNY 2GB

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PUSKILL DDR3 1600 8G 8GB

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Mushkin MR[A/B]4U266GHHF8G 8GB

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Corsair CMK16GX4M2B4266C19 8GB

Corsair CMK16GX4M2B4266C19 8GB