Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs SK Hynix GKE800SO102408-2400 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时
更快的读取速度，GB/s

16.7 14

测试中的平均数值
更快的写入速度，GB/s

11.8 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

SK Hynix GKE800SO102408-2400 8GB

需要考虑的原因
SK Hynix GKE800SO102408-2400 8GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

16.7 14.0
写入速度，GB/s

11.8 9.3
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 2327

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Super Talent F24EA8GS 8GB

Super Talent F24EA8GS 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMK16GX4M2K4400C19 8GB

Corsair CMK16GX4M2K4400C19 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB