Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs SK Hynix HMA81GU6CJR8N-VK 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

SK Hynix HMA81GU6CJR8N-VK 8GB

SK Hynix HMA81GU6CJR8N-VK 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时
更快的读取速度，GB/s

16.7 15.5

测试中的平均数值
更快的写入速度，GB/s

11.8 11.6

测试中的平均数值

SK Hynix HMA81GU6CJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GU6CJR8N-VK 8GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA81GU6CJR8N-VK 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

16.7 15.5
写入速度，GB/s

11.8 11.6
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 2822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFD8213.C16FDR2 8GB

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SK Hynix HYMP125U64CP8-S6 2GB

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SK Hynix HMAA2GU6AJR8N-XN 16GB

SK Hynix HMAA2GU6AJR8N-XN 16GB

Samsung M393B2G70BH0-CH9 16GB

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Panram International Corporation PUD43000C154G4NJW 4GB

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4SFS8213.M8FA 8GB

Crucial Technology CT8G4SFS8213.M8FA 8GB