Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs SK Hynix HMA851U6DJR6N-XN 4GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时
更快的读取速度，GB/s

16.7 15.9

测试中的平均数值
更快的写入速度，GB/s

11.8 10.6

测试中的平均数值

SK Hynix HMA851U6DJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851U6DJR6N-XN 4GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2 更高的带宽

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA851U6DJR6N-XN 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

16.7 15.9
写入速度，GB/s

11.8 10.6
内存带宽，mbps

21300 25600

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2756 2240

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905469-144.A00LF 4GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB