Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

报告一个错误

更快的读取速度，GB/s

19.1 16.7

测试中的平均数值
更快的写入速度，GB/s

16.2 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

16.7 19.1
写入速度，GB/s

11.8 16.2
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2756 3562

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Corsair CMX8GX3M4A1333C9 2GB

Corsair CMX8GX3M4A1333C9 2GB

INTENSO 5641162 8GB

INTENSO 5641162 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Transcend Information JM2400HSB-8G 8GB

Transcend Information JM2400HSB-8G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9965589-007.D01G 8GB

Kingston 9965589-007.D01G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston CBD32D4S2S1ME-8 8GB

Kingston CBD32D4S2S1ME-8 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMSX16GX4M2A2666C18 8GB

Corsair CMSX16GX4M2A2666C18 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905622-055.A00G 4GB

Kingston 9905622-055.A00G 4GB