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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Samsung M393B1K70DH0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB vs Samsung M393B1K70DH0-CK0 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

总分
star star star star star
Samsung M393B1K70DH0-CK0 8GB

Samsung M393B1K70DH0-CK0 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 49
    左右 27% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33% 更高的带宽
Samsung M393B1K70DH0-CK0 8GB 需要考虑的原因
Samsung M393B1K70DH0-CK0 8GB
报告一个错误
  • 更快的读取速度，GB/s
    10.3 left arrow 9.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 7.9
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Samsung M393B1K70DH0-CK0 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR3
  • PassMark中的延时，ns
    36 left arrow 49
  • 读取速度，GB/s
    9.1 left arrow 10.3
  • 写入速度，GB/s
    7.9 left arrow 8.2
  • 内存带宽，mbps
    17000 left arrow 12800
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2090 left arrow 2230

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9905471-002.A00LF 2GB

Samsung M393B1K70DH0-CK0 8GB RAM的比较

Samsung M393B1K70QB0-CK0 8GB
Samsung M471B1G73DB0-YK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
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Kingston 9965640-008.A01G 32GB
内存RAM
SK Hynix HMT451U6BFR8A-PB 4GB
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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4266C19-8GTRG 8GB
G Skill Intl F4-4266C19-8GTRG 8GB
内存RAM
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Samsung M471A5244CB0-CWE 4GB
Kingston 9905663-008.A00G 16GB
Kingston 9905663-008.A00G 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
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内存RAM
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Crucial Technology BLS16G4S26BFSD.16FD 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
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Crucial Technology BLS8G4D240FSB.M16FAD 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
A-DATA Technology AO2P32NCSV1-BEVS 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston K9CXF2-MIE 8GB
Kingston K9CXF2-MIE 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
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