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Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Samsung M378A1K43BB2-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB vs Samsung M378A1K43BB2-CRC 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

总分
star star star star star
Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 36
    左右 33% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 10.0
    测试中的平均数值
Samsung M378A1K43BB2-CRC 8GB 需要考虑的原因
Samsung M378A1K43BB2-CRC 8GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Samsung M378A1K43BB2-CRC 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 36
  • 读取速度，GB/s
    16.0 left arrow 14.7
  • 写入速度，GB/s
    10.8 left arrow 10.0
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2731 left arrow 2490

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M378A1K43BB2-CRC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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